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| SI7388DP New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V ID (A) 19 15 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Synchronous Rectifier PowerPAKt SO-8 D 6.15 mm S 1 2 3 S S 5.15 mm G 4 G D 8 7 6 5 D D D S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 19 Steady State Unit V 12 9 "50 A 1.6 1.9 1.2 -55 to 150 W _C ID IDM IS PD TJ, Tstg 15 4.1 5 3.2 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)a Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71919 S-21518--Rev. B, 26-Aug-02 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJC Symbol Typical 20 55 2.0 Maximum 25 65 2.6 Unit _C/W C/W 1 SI7388DP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 19 A VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 19 A IS = 4.1 A, VGS = 0 V 40 0.0058 0.008 40 0.75 1.1 0.007 0.010 S V 0.80 1.6 "100 1 5 V nA mA m A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 3 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 5.0 V, ID = 19 A 16.3 4 5.9 14 10 44 20 40 20 15 70 30 70 ns 24 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 3 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Transfer Characteristics 30 30 20 20 TC = 125_C 10 25_C 0 0.0 -55 _C 2.0 2.5 3.0 3.5 10 1V 0 0 2 4 6 8 10 2V 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71919 S-21518--Rev. B, 26-Aug-02 SI7388DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.020 2500 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.016 C - Capacitance (pF) 2000 Ciss 0.012 VGS = 4.5 V 0.008 VGS = 10 V 0.004 1500 1000 Coss 500 Crss 0.000 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 16 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 16 A r DS(on) - On-Resistance ( W) (Normalized) 14 21 28 35 8 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 7 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.05 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.04 I S - Source Current (A) 0.03 0.02 ID = 16 A 0.01 TJ = 25_C 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71919 S-21518--Rev. B, 26-Aug-02 www.vishay.com 3 SI7388DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 ID = 250 mA 160 200 Single Pulse Power 0.2 V GS(th) Variance (V) Power (W) -0.0 120 -0.2 80 -0.4 40 -0.6 -0.8 -50 0 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 10 ms 1 100 ms 1s 10 s 0.1 TC = 25_C Single Pulse dc 1 ms 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71919 S-21518--Rev. B, 26-Aug-02 SI7388DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71919 S-21518--Rev. B, 26-Aug-02 www.vishay.com 5 This datasheet has been download from: www..com Datasheets for electronics components. |
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